Molecular Beam Epitaxy of Graphene on Gold Foils: Growth and Characterization

Master's Thesis , 2012 , 46 Pages

Materials Science

The application of graphene for large-area electronics requires controllable growth of single crystalline quasi-freestanding graphene films. Controllable growth of graphene films on gold foils at various temperatures using molecular beam epitaxy is shown. Film quality and electrical characteristics probed using Hall measurement, Raman spectroscopy, and Rutherford backscattering spectrometry are shown to improve at lower temperature possibly peaking at ~825˚C. Further experiments are required to assess a stronger correlation between growth parameters and film characteristics. In particular, varying carbon flux and increasing the number of growths are discussed.

Table of Contents

Abstract

I. Introduction

II. Theory
A. Graphene
i. Properties
ii. Graphene Growth and Kinetics
B. Characterization
i. Surface Topology Analysis using Atomic Force Microscopy (AFM)
ii. Vibrational Energy States Using Raman Spectroscopy
iii. Chemical Composition using Rutherford Backscattering Spectrometry
iv. Electrical Carrier Concentration and Mobility using Hall Measurement

III. Experimental Methods
A. Growth Process
B. Transfer Process
C. Electrical Characterization
D. Material Characterization

IV. Results

V. Discussion
A. Explanation of AFM Images
B. Explanation of Raman Spectra
C. Explanation of Rutherford Backscattering Spectra
D. Explanation of Hall Measurements
E. Growth Parameters vs. Film Characteristic Trends

VI. Conclusion

VII. References

VIII. Appendix

• College: University of California, Berkeley
• Author: Anand Sampat (Author)
• Publication Year: 2012
• Pages: 46
• Catalog Number: V207041
• ISBN (eBook): 9783656356059
• ISBN (Book): 9783656357964
• Language: English
• Tags: molecular, beam, epitaxy, graphene, gold, foils, growth, characterization